? 2012 ixys corporation, all rights reserved ds100499(10/12) high voltage power mosfet (electrically isolated tab) n-channel enhancement mode features z silicon chip on direct-copper bond (dcb) substrate z isolated mounting surface z 4500v~ electrical isolation z molding epoxies meet ul 94 v-0 flammability classification advantages z high voltage package z easy to mount z space savings z high power density applications z high voltage power supplies z capacitor discharge applications z pulse circuits z laser and x-ray generation systems IXTF02N450 symbol test conditions maximum ratings v dss t j = 25 c to 150 c 4500 v v dgr t j = 25 c to 150 c, r gs = 1m 4500 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 200 ma i dm t c = 25 c, pulse width limited by t jm 600 ma p d t c = 25 c78w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 20..120 / 4.5..27 n/lb. v isol 50/60hz , 1 minute 4500 v~ weight 6 g v dss = 4500v i d25 = 200ma r ds(on) 750 1 = gate 5 = drain 2 = source isoplus i4-pak tm isolated tab 1 5 2 advance technical information symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v gs(th) v ds = v gs , i d = 250 a 4.0 6.5 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = 3.6kv, v gs = 0v 5 a v ds = 4.5kv 10 a v ds = 3.6kv note 2, t j = 100 c 25 a r ds(on) v gs = 10v, i d = 10ma, note 1 750
ixys reserves the right to change limits, test conditions, and dimensions. IXTF02N450 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 60v, i d = 30ma, n ote 1 60 100 ms c iss 256 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 19 pf c rss 5.5 pf r gi gate input resistance 76 t d(on) 17 ns t r 48 ns t d(off) 28 ns t f 143 ns q g(on) 10.4 nc q gs v gs = 10v, v ds = 1kv, i d = 0.5 ? i d25 3.4 nc q gd 5.0 nc r thjc 1.6 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 200 ma i sm repetitive, pulse width limited by t jm 800 ma v sd i f = i s , v gs = 0v, note 1 1.5 v t rr i f = 200ma, -di/dt = 50a/ s, v r = 100v 1.6 s notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. part must be heatsunk for high-temp i dss measurement. isoplus i4-pak tm (hv) outline pin 1 = gate pin 2 = soure pin 3 = drain pin 4 = isolated advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. resistive switching times v gs = 10v, v ds = 500v, i d = 100ma r g = 10 (external)
? 2012 ixys corporation, all rights reserved IXTF02N450 fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350 400 v ds - volts i d - milliamperes v gs = 10v 9v 8v 6v 7v fig. 3. output characteristics @ t j = 125oc 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350 v ds - volts i d - milliamperes v gs = 10v 8v 6v 5v 7v fig. 4. r ds(on) normalized to i d = 100ma value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 100ma i d = 200ma fig. 5. r ds(on) normalized to i d = 100ma value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 50 100 150 200 250 300 350 i d - milliamperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 200 220 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - milliamperes fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 v ds - volts i d - milliamperes v gs = 10v 9v 8v 7v 6v
ixys reserves the right to change limits, test conditions, and dimensions. IXTF02N450 fig. 7. input admittance 0 50 100 150 200 250 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v gs - volts i d - milliamperes t j = 125oc - 40oc 25oc fig. 8. transconductance 0 100 200 300 400 500 0 50 100 150 200 250 i d - milliamperes g f s - millisiemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 100 200 300 400 500 600 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v sd - volts i s - milliamperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 01234567891011 q g - nanocoulombs v gs - volts v ds = 1000v i d = 100ma i g = 1ma fig. 11. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2012 ixys corporation, all rights reserved fig. 13. forward-bias safe operating area @ t c = 25oc 10 100 1,000 100 1,000 10,000 v ds - volts i d - milliamperes t j = 150oc t c = 25oc single pulse 100ms 1ms r ds(on) limit 10ms dc fig. 14. forward-bias safe operating area @ t c = 75oc 10 100 1,000 100 1,000 10,000 v ds - volts i d - milliamperes t j = 150oc t c = 75oc single pulse 100ms 1ms r ds(on) limit 10ms dc ixys ref: t_02n450(h5)10-31-12-a IXTF02N450
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